
Kingston KVR26S19S8/16 16GB DDR4 2666MHZ Non ECC SODIMM Memory
This document describes ValueRAM's KVR26S19S8/16 is a 2G x 64-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 2G x 8-bit FBGAcomponents. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:Ā
Features:
⢠Power Supply: VDD = 1.2V Typical
⢠VDDQ = 1.2V Typical
⢠VPP = 2.5V Typical
⢠VDDSPD = 2.2V to 3.6V
⢠Nominal and dynamic on-die termination (ODT) for
Ā data, strobe, and mask signals
⢠Low-power auto self refresh (LPASR)
⢠Data bus inversion (DBI) for data bus
⢠On-die VREFDQ generation and calibration
⢠Single-rank
⢠On-board I2 serial presence-detect (SPD) EEPROM
⢠16 internal banks; 4 groups of 4 banks each
⢠Fixed burst chop (BC) of 4 and burst length (BL) of 8
Ā via the mode register set (MRS)
⢠Selectable BC4 or BL8 on-the-fly (OTF)
⢠Fly-by topology
⢠Terminated control command and address bus
⢠PCB: Height 1.18ā (30.00mm)
⢠RoHS Compliant and Halogen-Free
Ā
Specification:
| CL(IDD) | Ā 19 cycles |
| Row Cycle Time (tRCmin) | 45.75ns(min.) |
| Refresh to Active/Refresh Command Time (tRFCmin) |
350ns(min.) |
| Row Active Time (tRASmin) | 32ns(min.) |
| UL Rating | 94 V - 0 |
| Operating Temperature | 0o Ā C to +85o Ā C |
| Storage Temperature | -55o Ā C to +100o Ā C |
Original: $30.09
-70%$30.09
$9.03Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
This document describes ValueRAM's KVR26S19S8/16 is a 2G x 64-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 2G x 8-bit FBGAcomponents. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:Ā
Features:
⢠Power Supply: VDD = 1.2V Typical
⢠VDDQ = 1.2V Typical
⢠VPP = 2.5V Typical
⢠VDDSPD = 2.2V to 3.6V
⢠Nominal and dynamic on-die termination (ODT) for
Ā data, strobe, and mask signals
⢠Low-power auto self refresh (LPASR)
⢠Data bus inversion (DBI) for data bus
⢠On-die VREFDQ generation and calibration
⢠Single-rank
⢠On-board I2 serial presence-detect (SPD) EEPROM
⢠16 internal banks; 4 groups of 4 banks each
⢠Fixed burst chop (BC) of 4 and burst length (BL) of 8
Ā via the mode register set (MRS)
⢠Selectable BC4 or BL8 on-the-fly (OTF)
⢠Fly-by topology
⢠Terminated control command and address bus
⢠PCB: Height 1.18ā (30.00mm)
⢠RoHS Compliant and Halogen-Free
Ā
Specification:
| CL(IDD) | Ā 19 cycles |
| Row Cycle Time (tRCmin) | 45.75ns(min.) |
| Refresh to Active/Refresh Command Time (tRFCmin) |
350ns(min.) |
| Row Active Time (tRASmin) | 32ns(min.) |
| UL Rating | 94 V - 0 |
| Operating Temperature | 0o Ā C to +85o Ā C |
| Storage Temperature | -55o Ā C to +100o Ā C |
























