Transcend 410S M.2 2242 PCIe Gen4 x4 Internal SSD (256GB, 512GB, 1TB, 2TB) (TS256GMTE410S, TS512GMTE410S,TS1TMTE410S, TS2TMTE410S)
PCIe SSD 410S
Transcend's PCIe Gen 4x4 M.2 SSD MTE410S has a compact form factor and high-quality 3D NAND flash, making it easy to upgrade Ultrabooks, lightweight notebooks, tablets, and handheld gaming PCs. It is designed with multiple firmware optimization technologies, such as SLC caching and the LDPC ECC mechanism, which help to improve both storage reliability and extend the drive lifespan. The MTE410S is a fantastic choice for boosting the performance of modern work platforms.
Specifications:
| Type | M.2 2242 |
| Dimensions | Single-sided 42 mm x 22 mm x 2.23 mm (1.65" x 0.87" x 0.09") |
| Weight | 5 g (0.18 oz) |
| Bus Interface | NVMe PCIe Gen4 x4 |
| Flash Type | 3D NAND flash |
| Capacity | 1 TB |
| Operating Temperature | 0°C (32°F) ~ 70°C (158°F) |
| Operating Voltage | 3.3V±5% |
| Sequential Read/Write (CrystalDiskMark) | 1 TB - Up to 5,000/3,500 MB/s |
| 4K Random Read/Write (IOmeter) | 1 TB - Up to 330,000/690,000 IOPS |
| Terabytes Written (TBW) | 1 TB - 600 TBW |
| Mean Time Between Failures (MTBF) | 2,000,000 hour(s) |
| Drive Writes Per Day (DWPD) | 0.33 (5 yrs) |
| Note |
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Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
PCIe SSD 410S
Transcend's PCIe Gen 4x4 M.2 SSD MTE410S has a compact form factor and high-quality 3D NAND flash, making it easy to upgrade Ultrabooks, lightweight notebooks, tablets, and handheld gaming PCs. It is designed with multiple firmware optimization technologies, such as SLC caching and the LDPC ECC mechanism, which help to improve both storage reliability and extend the drive lifespan. The MTE410S is a fantastic choice for boosting the performance of modern work platforms.
Specifications:
| Type | M.2 2242 |
| Dimensions | Single-sided 42 mm x 22 mm x 2.23 mm (1.65" x 0.87" x 0.09") |
| Weight | 5 g (0.18 oz) |
| Bus Interface | NVMe PCIe Gen4 x4 |
| Flash Type | 3D NAND flash |
| Capacity | 1 TB |
| Operating Temperature | 0°C (32°F) ~ 70°C (158°F) |
| Operating Voltage | 3.3V±5% |
| Sequential Read/Write (CrystalDiskMark) | 1 TB - Up to 5,000/3,500 MB/s |
| 4K Random Read/Write (IOmeter) | 1 TB - Up to 330,000/690,000 IOPS |
| Terabytes Written (TBW) | 1 TB - 600 TBW |
| Mean Time Between Failures (MTBF) | 2,000,000 hour(s) |
| Drive Writes Per Day (DWPD) | 0.33 (5 yrs) |
| Note |
|
